HSBA6115 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBA6115

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23.6 nS

Cossⓘ - Capacitancia de salida: 224 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: PRPAK5X6

 Búsqueda de reemplazo de HSBA6115 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HSBA6115 datasheet

 ..1. Size:471K  1
hsba6115.pdf pdf_icon

HSBA6115

HSBA6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary V -60 V DS The HSBA6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON R 25 m DS(ON),max and gate charge for most of the synchronous buck converter applications. I -35 A D The HSBA6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

 9.1. Size:752K  1
hsba6074.pdf pdf_icon

HSBA6115

HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DS MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typ converter applications. I 100 A D The HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 9.2. Size:497K  1
hsba6040.pdf pdf_icon

HSBA6115

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

 9.3. Size:843K  1
hsba6066.pdf pdf_icon

HSBA6115

HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON) R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute

Otros transistores... GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204, HSBA4909, HSBA6074, 2SK3568, HSBA6214, HSBB3072, HSBB6113, HSBB6254, HY1906C2, HYG007N03LS1C2, HYG009N04LS1C2, HYG011N04LS1C2