HSBA6214
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSBA6214
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 17
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34
nS
Cossⓘ - Capacitancia
de salida: 65
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042
Ohm
Paquete / Cubierta:
PRPAK5X6
- Selección de transistores por parámetros
HSBA6214
Datasheet (PDF)
..1. Size:836K 1
hsba6214.pdf 
HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSBA6214 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 35 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 17 A DThe HSBA6214 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun
9.1. Size:752K 1
hsba6074.pdf 
HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DSMOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typconverter applications. I 100 A DThe HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
9.2. Size:497K 1
hsba6040.pdf 
HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat
9.3. Size:843K 1
hsba6066.pdf 
HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute
9.4. Size:637K 1
hsba6048.pdf 
HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
9.5. Size:471K 1
hsba6115.pdf 
HSBA6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary V -60 V DSThe HSBA6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON R 25 m DS(ON),maxand gate charge for most of the synchronous buck converter applications. I -35 A DThe HSBA6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
9.6. Size:494K 1
hsba6016.pdf 
HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant
9.7. Size:702K 1
hsba6032.pdf 
HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
9.8. Size:497K huashuo
hsba6040.pdf 
HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat
9.9. Size:843K huashuo
hsba6066.pdf 
HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute
9.10. Size:637K huashuo
hsba6048.pdf 
HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
9.11. Size:494K huashuo
hsba6016.pdf 
HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant
9.12. Size:702K huashuo
hsba6032.pdf 
HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
Otros transistores... IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
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, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
History: 2N6659
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