HSBA6214 Todos los transistores

 

HSBA6214 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA6214
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: PRPAK5X6
     - Selección de transistores por parámetros

 

HSBA6214 Datasheet (PDF)

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hsba6214.pdf pdf_icon

HSBA6214

HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSBA6214 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 35 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 17 A DThe HSBA6214 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

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hsba6074.pdf pdf_icon

HSBA6214

HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DSMOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typconverter applications. I 100 A DThe HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 9.2. Size:497K  1
hsba6040.pdf pdf_icon

HSBA6214

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

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hsba6066.pdf pdf_icon

HSBA6214

HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute

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History: 2N6659 | GSM2341 | RRL025P03 | 7N80G-TF3-T | LSF60R380HT | BSS123A | APTC90DDA12CT1G

 

 
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