HSBB3072 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBB3072

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: PRPAK3X3

 Búsqueda de reemplazo de HSBB3072 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HSBB3072 datasheet

 ..1. Size:904K  1
hsbb3072.pdf pdf_icon

HSBB3072

HSBB3072 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or V 30 V DS DC/DC Converters R 2 m DS(ON),typ Isolated DC/DC Converters in Telecom and Industrial. I 100 A D Description PRPAK3*3 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/

 8.1. Size:517K  1
hsbb3004.pdf pdf_icon

HSBB3072

HSBB3004 Description Product Summary VDS 30 V The HSBB3004 is the high cell density trenched N-ch MOSFETs, which provide RDS(ON),max 8.5 m excellent RDSON and gate charge for most of the synchronous buck converter applications. ID 46 A The HSBB3004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. PRPAK3X3 Pin

 8.2. Size:762K  1
hsbb3058.pdf pdf_icon

HSBB3072

HSBB3058 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 6 m Isolated DC/DC Converters in Telecom and Industrial. ID 28 A Features PRPAK3*3 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect

 8.3. Size:794K  1
hsbb3056.pdf pdf_icon

HSBB3072

HSBB3056 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBB3056 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 35 A The HSBB3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reli

Otros transistores... HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204, HSBA4909, HSBA6074, HSBA6115, HSBA6214, 5N60, HSBB6113, HSBB6254, HY1906C2, HYG007N03LS1C2, HYG009N04LS1C2, HYG011N04LS1C2, HYG013N03LS1C2, HYG015N04LS1C2