IRFH5010TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5010TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 67 nC
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 425 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5010TRPBF
IRFH5010TRPBF Datasheet (PDF)
irfh5010trpbf.pdf
IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5010pbf.pdf
PD -96297IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5010pbf.pdf
IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5015pbf.pdf
PD - 97446IRFH5015PbFHEXFET Power MOSFETVDS150 VRDS(on) max 31 m(@VGS = 10V)Qg (typical)33nCRG (typical)1.7ID PQFN 5X6 mm56 A(@Tc(Bottom) = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5015pbf.pdf
IRFH5015PbFHEXFET Power MOSFETVDS 150 VRDS(on) max 31 m(@VGS = 10V)Qg (typical) 36 nCRG (typical) 1.7 ID PQFN 5X6 mm44 A(@Tmb = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FIR12N80FG
History: FIR12N80FG
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918