IRFH5300TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5300TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 336 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 VQgⓘ - Carga de la puerta: 120 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 1360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Paquete / Cubierta: PQFN5X6
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IRFH5300TRPBF Datasheet (PDF)
irfh5300trpbf.pdf
IRMOSFET IRFH5300PbF VDSS 30 V RDS(on) max 1.4 m(@ VGS = 10V) Qg (typical) 50 nC Rg (typical) 1.3 ID 336 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
irfh5300pbf.pdf
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IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (
irfh5301trpbf.pdf
IRFH5301PbFHEXFET Power MOSFETVDS30 VRDS(on) max 1.85 m(@VGS = 10V)Qg (typical)37 nCRG (typical)1.5 ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5303pbf.pdf
PD -97467IRFH5303PbFHEXFET Power MOSFETVDS30 VRDS(on) max 4.2 m(@VGS = 10V)Qg (typical) 15nCRG (typical) 0.6ID 82 A(@Tc(Bottom) = 25C) PQFN 5X6 mmApplications Control MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow charge (typical 15nC) Lower Switching LossesLow Rg (typical 0.6 ) Lower Switching LossesLow Therm
irfh5304pbf.pdf
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irfh5302.pdf
PD -97156IRFH5302PbFHEXFET Power MOSFETVDS30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29nCRG (typical) 1.6ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures
irfh5301pbf.pdf
PD -96276IRFH5301PbFHEXFET Power MOSFETVDS30 VRDS(on) max 1.85 m(@VGS = 10V)Qg (typical)37 nCRG (typical)1.5 ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow
irfh5306pbf.pdf
PD - 97429IRFH5306PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 8.1 m(@VGS = 10V)Qg (typical) 7.8 nCRG (typical) 1.4 ID 44 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications Control MOSFET for buck convertersFeatures and BenefitsFeatures BenefitsLow charge (typical 7.8nC) Lower switching lossesLow thermal resistance to PCB (
irfh5302dpbf.pdf
IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5302pbf.pdf
IRFH5302PbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.1 m(@VGS = 10V)Qg (typical) 29 nCRG (typical) 1.6 ID 100 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeatures )Low RDSon (
irfh5301pbf.pdf
IRFH5301PbFHEXFET Power MOSFETVDS30 VRDS(on) max 1.85 m(@VGS = 10V)Qg (typical)37 nCRG (typical)1.5 ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5302dpbf.pdf
IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
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