IRFH7914TRPBF Todos los transistores

 

IRFH7914TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH7914TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 8.3 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
   Paquete / Cubierta: PQFN5X6

 Búsqueda de reemplazo de MOSFET IRFH7914TRPBF

 

IRFH7914TRPBF Datasheet (PDF)

 ..1. Size:288K  1
irfh7914trpbf.pdf

IRFH7914TRPBF
IRFH7914TRPBF

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-

 6.1. Size:249K  international rectifier
irfh7914pbf.pdf

IRFH7914TRPBF
IRFH7914TRPBF

PD - 97336IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSDl Low Gate ChargeSl Fully Characterized Avalanche Voltage andDG Current

 6.2. Size:288K  infineon
irfh7914pbf.pdf

IRFH7914TRPBF
IRFH7914TRPBF

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-

 7.1. Size:525K  international rectifier
irfh7911pbf.pdf

IRFH7914TRPBF
IRFH7914TRPBF

PD - 97427AIRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m:(@VGS = 10V)Qg (typical)8.3 34nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low char

 7.2. Size:315K  infineon
irfh7911pbf.pdf

IRFH7914TRPBF
IRFH7914TRPBF

IRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m(@VGS = 10V)Qg (typical)8.3 34 nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low charge control MOSF

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top

 


IRFH7914TRPBF
  IRFH7914TRPBF
  IRFH7914TRPBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: PZF010HK | PZC010HK | PZC010BL | PZ607UZ | PZ5S6JZ | PZ5S6EA | PZ5G7EA | PZ5D8JZ | PZ5D8EA | PZ567JZ | PZ5203EMAA | PX607UZ | PX5S6JZ | PX5S6EA | PX5D8JZ-T | PX5D8EA

 

 

 
Back to Top