IRFH7914TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7914TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de IRFH7914TRPBF MOSFET
IRFH7914TRPBF Datasheet (PDF)
irfh7914trpbf.pdf

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-
irfh7914pbf.pdf

IRFH7914PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck ConvertersVDSS RDS(on) maxQgused for Notebook Processor Power8.7m30V @VGS = 10V8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage and Currentl 100% Tested for RGl Lead-
irfh7911pbf.pdf

IRFH7911PbFHEXFET Power MOSFETQ1 Q2VDS30 30 VRDS(on) max 8.6 3.0 m(@VGS = 10V)Qg (typical)8.3 34 nCID 13 28 A(@TA = 25C)Dual PQFN 5X6 mmApplications Control and synchronous MOSFET for buck convertersFeatures and BenefitsBenefitsFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low charge control MOSF
irfh7934trpbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L
Otros transistores... IRFH5020TRPBF , IRFH5300TRPBF , IRFH5301TRPBF , IRFH5302TRPBF , IRFH7004TRPBF , IRFH7085TRPBF , IRFH7440TRPBF , IRFH7446TRPBF , IRFB7545 , IRFH7934TRPBF , IRFH8311TRPBF , IRFH8318TRPBF , IRFHM3911TRPBF , IRFHM792TRPBF , IRFHM830TRPBF , IRFHM8329TRPBF , IRLH6224TRPBF .
History: WST05N10L | SLP12N65C | MTM68410 | AP4423GM-HF | WSR80N10 | STW32NM50N | SVS80R900FJDE3
History: WST05N10L | SLP12N65C | MTM68410 | AP4423GM-HF | WSR80N10 | STW32NM50N | SVS80R900FJDE3



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