IRFH7934TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7934TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 623 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de IRFH7934TRPBF MOSFET
IRFH7934TRPBF Datasheet (PDF)
irfh7934trpbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L
irfh7934pbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L
irfh7936pbf.pdf

PD -97337AIRFH7936PbFApplications HEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated4.8m@VGS = 10V30V 17nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Teste
irfh7932pbf.pdf

IRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested for RGDl
Otros transistores... IRFH5300TRPBF , IRFH5301TRPBF , IRFH5302TRPBF , IRFH7004TRPBF , IRFH7085TRPBF , IRFH7440TRPBF , IRFH7446TRPBF , IRFH7914TRPBF , 5N50 , IRFH8311TRPBF , IRFH8318TRPBF , IRFHM3911TRPBF , IRFHM792TRPBF , IRFHM830TRPBF , IRFHM8329TRPBF , IRLH6224TRPBF , IRLHM630TRPBF .
History: SVF4N65F | WMK030N06HG4 | OSG65R1K4PF
History: SVF4N65F | WMK030N06HG4 | OSG65R1K4PF



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2sc1451 replacement | 6426 mosfet | b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381