MCAC16N03-TP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCAC16N03-TP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: DFN5060-8L
Búsqueda de reemplazo de MCAC16N03-TP MOSFET
MCAC16N03-TP Datasheet (PDF)
mcac16n03-tp.pdf

MCAC16N03Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range:
mcac16n03.pdf

MCAC16N03Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range:
mcac10h03-tp.pdf

MCAC10H03Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 30 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=30V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1.2 1.7 2.5 VGate-Thresh
mcac10h03.pdf

MCAC10H03Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 30 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=30V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1.2 1.7 2.5 VGate-Thresh
Otros transistores... JSM7409B , JSM7410 , JSM7788 , KCY3008A , KCY3310A , KNY3403B , LSGNE03R098WB , MCAC10H03-TP , IRFP260 , MCAC30N06Y-TP , MCAC40N10YA-TP , MCAC50N06Y-TP , MCAC50N10Y-TP , MCAC60N08Y-TP , MCAC75N02-TP , MCAC80N045Y-TP , MCG10P03-TP .
History: HM100P03 | FQPF3N80CYDTU | FQPF32N12V2
History: HM100P03 | FQPF3N80CYDTU | FQPF32N12V2



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