STM4615 Todos los transistores

 

STM4615 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STM4615
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

STM4615 Datasheet (PDF)

 ..1. Size:170K  samhop
 stm4615.pdf pdf_icon

STM4615

GreenProductSTM4615aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10.5 @ VGS=-10VSuface Mount Package.-40V -12.5A16 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless

 9.1. Size:169K  samhop
 stm4605.pdf pdf_icon

STM4615

GreenProductSTM4605aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.39 @ VGS=-10VSuface Mount Package.-40V -6A58 @ VGS=-4.5VD 5 4 G6 3D S7 2 SDS O-8D 8 1S1(TA=25C unless otherwise noted)ABS

 9.2. Size:157K  samhop
 stm4633.pdf pdf_icon

STM4615

STM4633aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=-10VSuface Mount Package.-30V -7.0A52 @ VGS=-4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)AB

 9.3. Size:157K  samhop
 stm4637.pdf pdf_icon

STM4615

STM4637aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.30 @ VGS=-10VSuface Mount Package.-30V -7.7A48 @ VGS=-4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)A

MOSTRAR MÁS

Otros transistores... STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , 5N50 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , STM4470E .

History: IRFZ24L

 

 
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