STM4615 Todos los transistores

 

STM4615 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM4615

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.5 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: SOP8

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STM4615 datasheet

 ..1. Size:170K  samhop
stm4615.pdf pdf_icon

STM4615

Green Product STM4615 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 10.5 @ VGS=-10V Suface Mount Package. -40V -12.5A 16 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 S D S O-8 D 8 1 S 1 (TA=25 C unless

 9.1. Size:169K  samhop
stm4605.pdf pdf_icon

STM4615

Green Product STM4605 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 39 @ VGS=-10V Suface Mount Package. -40V -6A 58 @ VGS=-4.5V D 5 4 G 6 3 D S 7 2 S D S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) ABS

 9.2. Size:157K  samhop
stm4633.pdf pdf_icon

STM4615

STM4633 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 33 @ VGS=-10V Suface Mount Package. -30V -7.0A 52 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) AB

 9.3. Size:157K  samhop
stm4637.pdf pdf_icon

STM4615

STM4637 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 30 @ VGS=-10V Suface Mount Package. -30V -7.7A 48 @ VGS=-4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) A

Otros transistores... STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , AO4407A , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , STM4470E .

 

 

 


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