NTMFD5C466NLT1G Todos los transistores

 

NTMFD5C466NLT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD5C466NLT1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 52 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 67 nS

Cossⓘ - Capacitancia de salida: 354 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm

Encapsulados: DFN8-5X6

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NTMFD5C466NLT1G datasheet

 0.1. Size:206K  1
 ntmfd5c466nlt1g.pdf pdf_icon

NTMFD5C466NLT1G

NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V

 2.1. Size:206K  onsemi
 ntmfd5c466nl.pdf pdf_icon

NTMFD5C466NLT1G

NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V

 3.1. Size:192K  1
 ntmfd5c466nt1g.pdf pdf_icon

NTMFD5C466NLT1G

NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value

 3.2. Size:192K  onsemi
 ntmfd5c466n.pdf pdf_icon

NTMFD5C466NLT1G

NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value

MOSTRAR MÁS

Otros transistores... MSK30P02DF , MSK3419DF , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 , MSK80N03NF , NTMFD5875NLT1G , IRFP450 , NTMFD5C466NT1G , NTMFD5C470NLT1G , NTMFD5C650NLT1G , NTMFD5C674NLT1G , NTMFD6H840NLT1G , NTMFD6H846NLT1G , NTMFS006N12MCT1G , NTMFS008N12MCT1G .

History: BSF083N03LQG

 

 

 

 

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