NTMFS5C404NLTT1G Todos los transistores

 

NTMFS5C404NLTT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C404NLTT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 370 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 4538 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00067 Ohm
   Paquete / Cubierta: DFN5
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NTMFS5C404NLTT1G Datasheet (PDF)

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NTMFS5C404NLTT1G

MOSFET Power, Single,N-Channel40 V, 0.67 mW, 370 ANTMFS5C404NLTFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced0.67 mW @ 10 V40 V370 AOptical Inspection1.0 mW @ 4.

 1.1. Size:116K  onsemi
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NTMFS5C404NLTT1G

NTMFS5C404NLTPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co

 2.1. Size:74K  onsemi
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NTMFS5C404NLTT1G

NTMFS5C404NLPower MOSFET40 V, 0.75 mW, 339 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)0.75 mW @ 10 V

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