NTMFS5C404NT3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C404NT3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 378 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 113 nS
Cossⓘ - Capacitancia de salida: 4600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0007 Ohm
Encapsulados: DFN5
Búsqueda de reemplazo de NTMFS5C404NT3G MOSFET
- Selecciónⓘ de transistores por parámetros
NTMFS5C404NT3G datasheet
ntmfs5c404nt3g.pdf
MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 378 A NTMFS5C404N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.7 mW @ 10 V 378 A MAXIMUM RATINGS (TJ = 25 C unless other
ntmfs5c404nltt1g.pdf
MOSFET Power, Single, N-Channel 40 V, 0.67 mW, 370 A NTMFS5C404NLT Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced 0.67 mW @ 10 V 40 V 370 A Optical Inspection 1.0 mW @ 4.
ntmfs5c404nlt.pdf
NTMFS5C404NLT Power MOSFET 40 V, 0.75 mW, 352 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co
ntmfs5c404nl.pdf
NTMFS5C404NL Power MOSFET 40 V, 0.75 mW, 339 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 0.75 mW @ 10 V
Otros transistores... NTMFS0D9N03CGT1G , NTMFS1D15N03CGT1G , NTMFS1D7N03CGT1G , NTMFS23D9N06HLT1G , NTMFS3D6N10MCLT1G , NTMFS4C05NT1G , NTMFS4D2N10MDT1G , NTMFS5C404NLTT1G , 2N60 , NTMFS5C406NLT1G , NTMFS5C406NT1G , NTMFS5C410NT3G , NTMFS5C423NLT1G , NTMFS5C426NLT1G , NTMFS5C426NT1G , NTMFS5C430NLT1G , NTMFS5C430NLT3G .
History: 2SK0615
History: 2SK0615
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