NTMFS5C410NT3G Todos los transistores

 

NTMFS5C410NT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C410NT3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 300 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 162 nS
   Cossⓘ - Capacitancia de salida: 3400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00092 Ohm
   Paquete / Cubierta: DFN5

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NTMFS5C410NT3G Datasheet (PDF)

 ..1. Size:172K  1
ntmfs5c410nt3g.pdf

NTMFS5C410NT3G
NTMFS5C410NT3G

MOSFET Single,N-Channel40 V, 0.92 mW, 300 ANTMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.92 mW @ 10 V 300 AMAXIMUM RATINGS (TJ = 25C unless otherwise

 3.1. Size:172K  onsemi
ntmfs5c410n.pdf

NTMFS5C410NT3G
NTMFS5C410NT3G

MOSFET Single,N-Channel40 V, 0.92 mW, 300 ANTMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.92 mW @ 10 V 300 AMAXIMUM RATINGS (TJ = 25C unless otherwise

 3.2. Size:71K  onsemi
ntmfs5c410nl.pdf

NTMFS5C410NT3G
NTMFS5C410NT3G

NTMFS5C410NLPower MOSFET40 V, 0.9 mW, 302 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)0.9 mW @ 10 V

 3.3. Size:113K  onsemi
ntmfs5c410nlt.pdf

NTMFS5C410NT3G
NTMFS5C410NT3G

NTMFS5C410NLTPower MOSFET40 V, 0.9 mW, 315 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

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