NTMFS5C410NT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C410NT3G
Código: 5C410N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 166 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 86 nC
trⓘ - Tiempo de subida: 162 nS
Cossⓘ - Capacitancia de salida: 3400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00092 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS5C410NT3G
NTMFS5C410NT3G Datasheet (PDF)
ntmfs5c410nt3g.pdf
MOSFET Single,N-Channel40 V, 0.92 mW, 300 ANTMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.92 mW @ 10 V 300 AMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5c410n.pdf
MOSFET Single,N-Channel40 V, 0.92 mW, 300 ANTMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 0.92 mW @ 10 V 300 AMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs5c410nl.pdf
NTMFS5C410NLPower MOSFET40 V, 0.9 mW, 302 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)0.9 mW @ 10 V
ntmfs5c410nlt.pdf
NTMFS5C410NLTPower MOSFET40 V, 0.9 mW, 315 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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