NTMFS5C460NLT3G Todos los transistores

 

NTMFS5C460NLT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C460NLT3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: DFN5
 

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NTMFS5C460NLT3G Datasheet (PDF)

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NTMFS5C460NLT3G

NTMFS5C460NLPower MOSFET40 V, 4.5 mW, 78 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.5 mW @ 10 V40 V

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NTMFS5C460NLT3G

NTMFS5C460NLPower MOSFET40 V, 4.5 mW, 78 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.5 mW @ 10 V40 V

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 ntmfs5c468nlt1g.pdf pdf_icon

NTMFS5C460NLT3G

NTMFS5C468NLMOSFET Power, Single,N-Channel40 V, 10.3 mW, 37 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10.3 mW @ 10 V40 V37 AMAXIMUM RATINGS (TJ = 25C unless ot

 5.2. Size:176K  onsemi
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NTMFS5C460NLT3G

NTMFS5C468NLMOSFET Power, Single,N-Channel40 V, 10.3 mW, 37 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10.3 mW @ 10 V40 V37 AMAXIMUM RATINGS (TJ = 25C unless ot

MOSTRAR MÁS

Otros transistores... NTMFS5C426NT1G , NTMFS5C430NLT1G , NTMFS5C430NLT3G , NTMFS5C442NLT1G , NTMFS5C442NT3G , NTMFS5C450NLT3G , NTMFS5C450NT3G , NTMFS5C456NLT3G , 8N60 , NTMFS5C468NLT1G , NTMFS5C604NLT1G , NTMFS5C604NLT3G , NTMFS5C609NLT1G , NTMFS5C612NLT1G , NTMFS5C612NT1G-TE , NTMFS5C628NLT1G , NTMFS5C628NT1G .

History: 2N6796LCC4

 

 
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