NTMFS5C604NLT3G Todos los transistores

 

NTMFS5C604NLT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C604NLT3G
   Código: 5C604L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 200 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 287 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 120 nC
   Tiempo de subida (tr): 29.9 nS
   Conductancia de drenaje-sustrato (Cd): 3750 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0012 Ohm
   Paquete / Cubierta: DFN5

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NTMFS5C604NLT3G Datasheet (PDF)

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NTMFS5C604NLT3G
NTMFS5C604NLT3G

MOSFET Power, Single,N-Channel60 V, 1.2 mW, 287 ANTMFS5C604NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.2 mW @ 10 V60 V287 A1.7 mW @ 4.5 VMAXIMUM RATINGS (TJ =

 1.1. Size:72K  1
ntmfs5c604nlt1g.pdf

NTMFS5C604NLT3G
NTMFS5C604NLT3G

NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60

 2.1. Size:112K  onsemi
ntmfs5c604nl.pdf

NTMFS5C604NLT3G
NTMFS5C604NLT3G

NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60

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