NTMFS5C646NLT1G Todos los transistores

 

NTMFS5C646NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS5C646NLT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 93 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14.9 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: DFN5
 

 Búsqueda de reemplazo de NTMFS5C646NLT1G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTMFS5C646NLT1G Datasheet (PDF)

 0.1. Size:76K  1
 ntmfs5c646nlt1g.pdf pdf_icon

NTMFS5C646NLT1G

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles

 1.1. Size:117K  1
 ntmfs5c646nlt3g.pdf pdf_icon

NTMFS5C646NLT1G

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles

 2.1. Size:113K  onsemi
 ntmfs5c646nl.pdf pdf_icon

NTMFS5C646NLT1G

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.7 mW @ 10 V60 V

MOSTRAR MÁS

Otros transistores... NTMFS5C604NLT3G , NTMFS5C609NLT1G , NTMFS5C612NLT1G , NTMFS5C612NT1G-TE , NTMFS5C628NLT1G , NTMFS5C628NT1G , NTMFS5C645NLT1G , NTMFS5C645NLT3G , BS170 , NTMFS5C646NLT3G , NTMFS5C670NLT3G , NTMFS5C670NT1G , NTMFS5C673NLT1G , NTMFS5C673NT1G , NTMFS5H425NLT1G , NTMFS6B05NT1G , NTMFS6B05NT3G .

History: CEU04N7G | 2SK2225-80-E | CEP14N5

 

 
Back to Top

 


 
.