NTMFS5C673NLT1G Todos los transistores

 

NTMFS5C673NLT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS5C673NLT1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0092 Ohm

Encapsulados: DFN5

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NTMFS5C673NLT1G datasheet

 0.1. Size:127K  1
ntmfs5c673nlt1g.pdf pdf_icon

NTMFS5C673NLT1G

NTMFS5C673NL Power MOSFET 60 V, 9.2 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 9.2 mW @ 10 V 60 V

 2.1. Size:127K  onsemi
ntmfs5c673nl.pdf pdf_icon

NTMFS5C673NLT1G

NTMFS5C673NL Power MOSFET 60 V, 9.2 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 9.2 mW @ 10 V 60 V

 3.1. Size:168K  1
ntmfs5c673nt1g.pdf pdf_icon

NTMFS5C673NLT1G

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NTMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 10.7 mW @ 10 V 50 A MAXIMUM RATINGS (TJ = 25 C unless other

 3.2. Size:168K  onsemi
ntmfs5c673n.pdf pdf_icon

NTMFS5C673NLT1G

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NTMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 10.7 mW @ 10 V 50 A MAXIMUM RATINGS (TJ = 25 C unless other

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