NTMFS5H425NLT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5H425NLT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 118 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 460 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Encapsulados: DFN5
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NTMFS5H425NLT1G datasheet
ntmfs5h425nlt1g.pdf
NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise
ntmfs5h425nl.pdf
NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise
ntmfs5h419nl.pdf
NTMFS5H419NL MOSFET Power, Single, N-Channel 40 V, 2.1 mW, 155 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise
ntmfs5h431nl.pdf
NTMFS5H431NL MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 106 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.3 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise
Otros transistores... NTMFS5C645NLT1G , NTMFS5C645NLT3G , NTMFS5C646NLT1G , NTMFS5C646NLT3G , NTMFS5C670NLT3G , NTMFS5C670NT1G , NTMFS5C673NLT1G , NTMFS5C673NT1G , IRF540N , NTMFS6B05NT1G , NTMFS6B05NT3G , NTMFS6B14NT3G , NTMFS6H801NT1G , NTMFS6H818NLT1G , NTMFS6H836NLT1G , NTMFS6H848NLT1G , NTMFS6H852NLT1G .
History: NTMFS6B05NT1G
History: NTMFS6B05NT1G
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