NTMFS6B05NT1G Todos los transistores

 

NTMFS6B05NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS6B05NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 138 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 104 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: DFN5
 

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NTMFS6B05NT1G Datasheet (PDF)

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NTMFS6B05NT1G

NTMFS6B05NPower MOSFET100 V, 8 mW, 104 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 3.1. Size:171K  1
 ntmfs6b05nt3g.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B05NMOSFET Power, Single,N-Channel100 V, 8 mW, 104 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS100 V 8 mW @ 10 V 104 ACompliantMAXIMUM RATINGS (TJ

 4.1. Size:72K  onsemi
 ntmfs6b05n.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B05NPower MOSFET100 V, 8 mW, 104 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 6.1. Size:72K  onsemi
 ntmfs6b03n.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B03NPower MOSFET100 V, 4.8 mW, 132 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise not

MOSTRAR MÁS

Otros transistores... NTMFS5C645NLT3G , NTMFS5C646NLT1G , NTMFS5C646NLT3G , NTMFS5C670NLT3G , NTMFS5C670NT1G , NTMFS5C673NLT1G , NTMFS5C673NT1G , NTMFS5H425NLT1G , IRF540N , NTMFS6B05NT3G , NTMFS6B14NT3G , NTMFS6H801NT1G , NTMFS6H818NLT1G , NTMFS6H836NLT1G , NTMFS6H848NLT1G , NTMFS6H852NLT1G , NTTFS4C05NTAG .

History: KTK5134S | IPD09N03LA | MTDN8233CDV8 | APT10030L2VFRG

 

 
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