NTMFS6B05NT1G Todos los transistores

 

NTMFS6B05NT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS6B05NT1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 104 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 570 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: DFN5

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NTMFS6B05NT1G datasheet

 ..1. Size:77K  1
ntmfs6b05nt1g.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

 3.1. Size:171K  1
ntmfs6b05nt3g.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B05N MOSFET Power, Single, N-Channel 100 V, 8 mW, 104 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 100 V 8 mW @ 10 V 104 A Compliant MAXIMUM RATINGS (TJ

 4.1. Size:72K  onsemi
ntmfs6b05n.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

 6.1. Size:72K  onsemi
ntmfs6b03n.pdf pdf_icon

NTMFS6B05NT1G

NTMFS6B03N Power MOSFET 100 V, 4.8 mW, 132 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise not

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