NTMFS6H852NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS6H852NLT1G
Código: 6H852L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 17 nC
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 116 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0131 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS6H852NLT1G
NTMFS6H852NLT1G Datasheet (PDF)
ntmfs6h852nlt1g.pdf
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MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANTMFS6H852NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant13.1 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
ntmfs6h852nl.pdf
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MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANTMFS6H852NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant13.1 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
ntmfs6h848nlt1g.pdf
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MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANTMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant8.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 80
ntmfs6h818nlt1g.pdf
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MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
ntmfs6h801nt1g.pdf
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NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V
ntmfs6h836nlt1g.pdf
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MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANTMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.2 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise not
ntmfs6h801n.pdf
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NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V
ntmfs6h836nl.pdf
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MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANTMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.2 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise not
ntmfs6h836n.pdf
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MOSFET - Power, SingleN-Channel80 V, 6.7 mW, 80 ANTMFS6H836NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX80 V 6.7 mW @ 10 V 80 AMAXIMUM RATINGS (TJ = 25C unless otherwise
ntmfs6h818n.pdf
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NTMFS6H818NMOSFET Power, Single,N-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 3.7 mW @ 10 V 123 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs6h864nl.pdf
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MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTMFS6H864NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX29 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80
ntmfs6h800nl.pdf
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NTMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol V
ntmfs6h800n.pdf
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NTMFS6H800NMOSFET Power, Single,N-Channel80 V, 2.1 mW, 203 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 2.1 mW @ 10 V 203 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs6h801nl.pdf
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MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANTMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
ntmfs6h848nl.pdf
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MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANTMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant8.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 80
ntmfs6h818nl.pdf
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MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100