NTMFS6H852NLT1G Todos los transistores

 

NTMFS6H852NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS6H852NLT1G

Código: 6H852L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 54 W

Voltaje máximo drenador - fuente |Vds|: 80 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 42 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V

Carga de la puerta (Qg): 17 nC

Tiempo de subida (tr): 53 nS

Conductancia de drenaje-sustrato (Cd): 116 pF

Resistencia entre drenaje y fuente RDS(on): 0.0131 Ohm

Paquete / Cubierta: DFN5

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NTMFS6H852NLT1G Datasheet (PDF)

 0.1. Size:177K  1
ntmfs6h852nlt1g.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANTMFS6H852NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant13.1 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 2.1. Size:177K  onsemi
ntmfs6h852nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANTMFS6H852NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant13.1 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 6.1. Size:176K  1
ntmfs6h818nlt1g.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 6.2. Size:98K  1
ntmfs6h801nt1g.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V

 6.3. Size:175K  1
ntmfs6h848nlt1g.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANTMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant8.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 80

 6.4. Size:173K  1
ntmfs6h836nlt1g.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANTMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.2 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise not

 6.5. Size:194K  onsemi
ntmfs6h800nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

NTMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol V

 6.6. Size:177K  onsemi
ntmfs6h864nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTMFS6H864NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX29 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80

 6.7. Size:175K  onsemi
ntmfs6h848nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANTMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant8.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 80

 6.8. Size:176K  onsemi
ntmfs6h818nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 6.9. Size:98K  onsemi
ntmfs6h801n.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V

 6.10. Size:177K  onsemi
ntmfs6h818n.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

NTMFS6H818NMOSFET Power, Single,N-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 3.7 mW @ 10 V 123 AMAXIMUM RATINGS (TJ = 25C unless other

 6.11. Size:179K  onsemi
ntmfs6h800n.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

NTMFS6H800NMOSFET Power, Single,N-Channel80 V, 2.1 mW, 203 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 2.1 mW @ 10 V 203 AMAXIMUM RATINGS (TJ = 25C unless other

 6.12. Size:178K  onsemi
ntmfs6h836n.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 6.7 mW, 80 ANTMFS6H836NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX80 V 6.7 mW @ 10 V 80 AMAXIMUM RATINGS (TJ = 25C unless otherwise

 6.13. Size:173K  onsemi
ntmfs6h836nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANTMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.2 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise not

 6.14. Size:174K  onsemi
ntmfs6h801nl.pdf

NTMFS6H852NLT1G
NTMFS6H852NLT1G

MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANTMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

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