NTTFS4C05NTAG Todos los transistores

 

NTTFS4C05NTAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTTFS4C05NTAG
   Código: 4C05N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 33 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 75 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
   Carga de la puerta (Qg): 14.5 nC
   Tiempo de subida (tr): 30 nS
   Conductancia de drenaje-sustrato (Cd): 1224 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0036 Ohm
   Paquete / Cubierta: WDFN8

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NTTFS4C05NTAG Datasheet (PDF)

 ..1. Size:121K  1
 nttfs4c05ntag.pdf

NTTFS4C05NTAG NTTFS4C05NTAG

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsV(BR)DSS RDS(on) MAX ID MAX DC-DC Converters3.6 mW @ 10 V

 4.1. Size:112K  onsemi
 nttfs4c05n.pdf

NTTFS4C05NTAG NTTFS4C05NTAG

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications3.6 mW @ 10 V DC-DC Converters

 6.1. Size:119K  onsemi
 nttfs4c06n.pdf

NTTFS4C05NTAG NTTFS4C05NTAG

NTTFS4C06NPower MOSFET30 V, 67 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant4.2 mW @ 10 VApplications30 V 67 A6.1 mW @

 6.2. Size:206K  onsemi
 nttfs4c02n.pdf

NTTFS4C05NTAG NTTFS4C05NTAG

NTTFS4C02NMOSFET Power, Single,N-Channel, m8FL30 V, 170 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.25 mW @ 10 V30 V 170 AApplications3.1

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