NTTFS4C10NTAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTTFS4C10NTAG
   Código: 4C10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 9.7 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 574 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm
   Paquete / Cubierta: WDFN8

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NTTFS4C10NTAG Datasheet (PDF)

..1. Size:118K 1
nttfs4c10ntag.pdf

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.4 mW @ 10 VApplications30 V 44 A11 mW @ 4.5

4.1. Size:109K onsemi
nttfs4c10n.pdf

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications7.4 mW @ 10 V DC-DC Converters

6.1. Size:78K onsemi
nttfs4c13n.pdf

NTTFS4C13NPower MOSFET30 V, 38 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications9.4 mW @ 10 V CPU Power Delive

7.1. Size:121K 1
nttfs4c05ntag.pdf

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsV(BR)DSS RDS(on) MAX ID MAX DC-DC Converters3.6 mW @ 10 V

7.2. Size:119K 1
nttfs4c25ntag.pdf

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

7.3. Size:119K onsemi
nttfs4c06n.pdf

NTTFS4C06NPower MOSFET30 V, 67 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant4.2 mW @ 10 VApplications30 V 67 A6.1 mW @

7.4. Size:206K onsemi
nttfs4c02n.pdf

NTTFS4C02NMOSFET Power, Single,N-Channel, m8FL30 V, 170 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.25 mW @ 10 V30 V 170 AApplications3.1

7.5. Size:115K onsemi
nttfs4c25n.pdf

7.6. Size:112K onsemi
nttfs4c05n.pdf

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications3.6 mW @ 10 V DC-DC Converters

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