FDP12N60NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP12N60NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FDP12N60NZ

FDP12N60NZ Datasheet (PDF)

..1. Size:284K fairchild semi
fdp12n60nz fdpf12n60nz.pdf

September 2010UniFET-II TMFDP12N60NZ / FDPF12N60NZN-Channel MOSFET600V, 12A, 0.65Features Description RDS(on) = 0.53 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 26nC)DOMS technology. Low Crss ( Typ. 12pF)This advance techno

..2. Size:643K onsemi
fdp12n60nz fdpf12n60nz.pdf

November 2013FDP12N60NZ / FDPF12N60NZN-Channel UniFETTM II MOSFET600 V, 12 A, 650 mFeatures Description RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 26 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

8.1. Size:377K fairchild semi
fdp12n50nz fdpf12n50nz.pdf

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

8.2. Size:446K fairchild semi
fdp12n50 fdpf12n50.pdf

June 2007UniFETTMFDP12N50 / FDPF12N50tmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

8.3. Size:695K fairchild semi
fdp12n50f fdpf12n50ft.pdf

December 2007UniFETTMFDP12N50F / FDPF12N50FTtmN-Channel MOSFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technolog

8.4. Size:646K fairchild semi
fdp12n50u fdpf12n50ut.pdf

November 2007Ultra FRFETTMFDP12N50U / FDPF12N50UTtmN-Channel MOSFET, FRFET 500V, 10A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance

8.5. Size:535K fairchild semi
fdp12n50 fdpf12n50t.pdf

May 2012UniFETTMFDP12N50 / FDPF12N50TtmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

8.6. Size:739K onsemi
fdp12n50 fdpf12n50t.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.7. Size:259K inchange semiconductor
fdp12n50nz.pdf

Isc N-Channel MOSFET Transistor FDP12N50NZFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

Otros transistores... FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , STM4470E , FDP12N50 , FDP12N50NZ , IRF540 , STM4470A , FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 .

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