SVF7N80K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SVF7N80K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 72 nS
   Cossⓘ - Capacitancia de salida: 104 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO262

Búsqueda de reemplazo de MOSFET SVF7N80K

SVF7N80K Datasheet (PDF)

..1. Size:392K silan
svf7n80t svf7n80f svf7n80kl svf7n80k svf7n80fd.pdf

SVF7N80T/F/KL/K/FD 7A800V N 2SVF7N80T/F/KL/K/FD N MOS F-CellTM VDMOS 11 233TO-220F-3L

7.1. Size:520K silan
svf7n80t svf7n80f.pdf

SVF7N80T/F 7A800V N 2SVF7N80T/F NMOSF-CellTMVDMOS 1 3 AC-DC

9.1. Size:407K silan
svf7n65f svf7n65s svf7n65str svf7n65t.pdf

SVF7N65T/F/S 7A650V N 2 SVF7N65T/F/S N MOS 1 F-CellTM VDMOS 31. 2. 3.

9.2. Size:512K silan
svf7n60f svf7n60s svf7n60d.pdf

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC

9.3. Size:783K silan
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

9.4. Size:452K silan
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3

9.5. Size:321K silan
svf7n65cfjh.pdf

SVF7N65CFJH 7A650V N 2SVF7N65CFJH N MOS F-CellTM VDMOS 13

9.6. Size:626K silan
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65cs svf7n65cfq.pdf

SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS

9.7. Size:575K silan
svf7n65t svf7n65f svf7n65s.pdf

SVF7N65T/F/S 7A650V N SVF7N65T/F/S N MOS F-CellTM VDMOS AC-DC

9.8. Size:623K silan
svf7n65f-t.pdf

SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

9.9. Size:641K silan
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65ct.pdf

SVF7N65CF/D/MJ/K/T 7A650V N 2SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 123 TO-262-3L3

9.10. Size:527K silan
svf7n65cf svf7n65cdtr svf7n65cmj svf7n65cmjl svf7n65ck svf7n65ct.pdf

SVF7N65CF/D/MJ/MJL/K/T 7A650V N 2 1SVF7N65CF/D/MJ/MJL/K/T N MOS 231 F-CellTM VDMOS TO-262-3L3 12

9.11. Size:627K silan
svf7n60t svf7n60f.pdf

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: