STM4433A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STM4433A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 9.4 nC
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET STM4433A

STM4433A Datasheet (PDF)

..1. Size:659K samhop
stm4433a.pdf

S T M4433AS amHop Microelectronics C orp. J an.25 2005P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E S5S uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.35 @ V G S = -10V-30V -6AS urface Mount Package.55 @ V G S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMU

8.1. Size:113K samhop
stm4432.pdf

GrerrPPrPPSTM4432aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.11 @ VGS=10VSuface Mount Package.40V 12A15 @ VGS=4.5VSO-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Paramet

8.2. Size:134K samhop
stm4435.pdf

GreenProductS TM4435S amHop Microelectronics C orp.J AN.20 2006P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VG S = -10V-30V -8AS urface Mount Package.33 @ VG S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE M

8.3. Size:655K samhop
stm4439a.pdf

S T M4439AS amHop Microelectronics C orp. Dec 15.2004P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E S5S uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.10 @ V G S = -10V-30V -14AS urface Mount Package.18 @ V G S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMU

8.4. Size:154K samhop
stm4437a.pdf

STM4437AaS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.15 @ VGS=-10VSuface Mount Package.-30V -10A26 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM R

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