STM4432 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM4432

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SOP8

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STM4432 datasheet

 ..1. Size:113K  samhop
 stm4432.pdf pdf_icon

STM4432

Gre r r P Pr P P STM4432 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 11 @ VGS=10V Suface Mount Package. 40V 12A 15 @ VGS=4.5V SO-8 1 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Paramet

 8.1. Size:659K  samhop
 stm4433a.pdf pdf_icon

STM4432

S T M4433A S amHop Microelectronics C orp. J an.25 2005 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S 5 S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V -6A S urface Mount Package. 55 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMU

 8.2. Size:134K  samhop
 stm4435.pdf pdf_icon

STM4432

Green Product S TM4435 S amHop Microelectronics C orp. J AN.20 2006 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VG S = -10V -30V -8A S urface Mount Package. 33 @ VG S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE M

 8.3. Size:655K  samhop
 stm4439a.pdf pdf_icon

STM4432

S T M4439A S amHop Microelectronics C orp. Dec 15.2004 P-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S 5 S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 10 @ V G S = -10V -30V -14A S urface Mount Package. 18 @ V G S = -4.5V D D D D 8 7 6 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMU

MOSTRAR MÁS

Otros transistores... FDP24N40, STM4435, FDP2532, FDP2552, FDP2572, FDP2614, STM4433A, FDP26N40, STP75NF75, FDP2710, FDP2710F085, FDP33N25, FDP3651U, STM4410A, FDP3672, FDP3682, STM301N