SVS65R400FJHE3 Todos los transistores

 

SVS65R400FJHE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SVS65R400FJHE3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 34 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220F

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SVS65R400FJHE3 Datasheet (PDF)

 ..1. Size:538K  silan
svs65r400de3tr svs65r400fjhe3 svs65r400fjde3 svs65r400l8ae3tr.pdf

SVS65R400FJHE3
SVS65R400FJHE3

SVS65R400D(FJH)(FJD)(L8A)E3 11A, 650V MOS 2SVS65R400D(FJH)(FJD)(L8A)E3 N MOSFET MOS 1 SVS65R400D(FJH)(FJD)(L8A)E3

 8.1. Size:627K  silan
svs65r280fjdd4 svs65r280dd4tr svs65r280fd4 svs65r280td4 svs65r280sd4 svs65r280sd4tr.pdf

SVS65R400FJHE3
SVS65R400FJHE3

SVS65R280FJD(F)(D)(T)(S)D4 14A, 650V MOS 2SVS65R280FJD(F)(D)(T)(S)D4 N MOSFET MOS 1 123SVS65R280FJD(F)(D)(T)(S)D4

 8.2. Size:627K  silan
svs65r240fjdd4 svs65r240dd4tr svs65r240l8ad4tr svs65r240td4 svs65r240fd4.pdf

SVS65R400FJHE3
SVS65R400FJHE3

SVS65R240FJD(F)(D)(L8A)(T)D4 20A, 650V MOS 2 SVS65R240FJD(F)(D)(L8A)(T)D4 N 1MOSFET MOS 123TO-220FJD-3L 3SVS65R240FJD(F)

 8.3. Size:651K  silan
svs65r380fjd4 svs65r380fjdd4 svs65r380fd4 svs65r380dd4tr.pdf

SVS65R400FJHE3
SVS65R400FJHE3

SVS65R380FJ(FJD)(F)(D)D4 11A, 650V MOS 2SVS65R380FJ(FJD)(F)(D)D4 N MOSFET MOS 1 SVS65R380FJ(FJD)(F)(D)D4

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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