FDP3672 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP3672

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 105 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: TO220

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FDP3672 datasheet

 ..1. Size:237K  fairchild semi
fdp3672.pdf pdf_icon

FDP3672

September 2003 FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33m Features Applications rDS(ON) = 25m (Typ.), VGS = 10V, ID = 41A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectif

 ..2. Size:693K  onsemi
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FDP3672

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:283K  inchange semiconductor
fdp3672.pdf pdf_icon

FDP3672

isc N-Channel MOSFET Transistor FDP3672 FEATURES With TO-220 packaging Drain Source Voltage- V 105V DSS Static drain-source on-resistance RDS(on) 33m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:278K  fairchild semi
fdb3682 fdp3682.pdf pdf_icon

FDP3672

September 2002 FDB3682 / FDP3682 N-Channel PowerTrench MOSFET 100V, 32A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchr

Otros transistores... STM4433A, FDP26N40, STM4432, FDP2710, FDP2710F085, FDP33N25, FDP3651U, STM4410A, K3569, FDP3682, STM301N, FDP42AN15A0, FDP51N25, FDP52N20, STM201N, FDP5500F085, FDP55N06