FDP3682 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2002FDB3682 / FDP3682N-Channel PowerTrench MOSFET100V, 32A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchr

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP3682FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 36m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

October 2013FDP3652 / FDB3652N-Channel PowerTrench MOSFET 100 V, 61 A, 16 mApplicationsFeatures rDS(on) = 14 m ( Typ.), VGS = 10 V, ID = 61 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Qg(tot) = 41 nC ( Typ.), VGS = 10 V Low Miller Charge Motor drives and Uninterruptible Power Supplies Low QRR Body Diode

July 2006FDP3651UN-Channel PowerTrench MOSFET 100V, 80A, 15mFeatures Applications rDS(on)=13 m(Typ.), VGS = 10V, ID = 40A DC/DC converters and Off-Line UPS Qg(TOT)=49 nc(Typ.), VGS = 10 V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier

December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

October 2003FDB3652 / FDP3652 / FDI3652N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

October 2013FDH3632 / FDP3632 / FDB3632N-Channel PowerTrench MOSFET 100 V, 80 A, 9 mApplicationsFeatures RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification Qg(tot) = 84 nC (Typ.), VGS = 10 V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body Diode Micro Solar Inver

September 2003FDP3672N-Channel PowerTrench MOSFET105V, 41A, 33mFeatures Applications rDS(ON) = 25m (Typ.), VGS = 10V, ID = 41A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectif

MOSFET Power, N-Channel,POWERTRENCH)100 V, 80 A, 9 mWFDH3632, FDP3632,FDB3632www.onsemi.comFeatures RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 VVDSS RDS(ON) MAX ID MAX Low Miller Charge100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)D These Devices are Pb-Free and are R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP3651UFEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 18m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc N-Channel MOSFET Transistor FDP3632FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 9m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel MOSFET Transistor FDP3672FEATURESWith TO-220 packagingDrain Source Voltage-: V 105VDSSStatic drain-source on-resistance:RDS(on) 33m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)