HY3408AM Todos los transistores

 

HY3408AM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY3408AM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 584 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de HY3408AM MOSFET

- Selecciónⓘ de transistores por parámetros

 

HY3408AM datasheet

 8.1. Size:820K  1
hy3408.pdf pdf_icon

HY3408AM

HY3408P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC

 9.1. Size:784K  1
hy3403.pdf pdf_icon

HY3408AM

HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P

 9.2. Size:1093K  hymexa
hy3403p hy3403b.pdf pdf_icon

HY3408AM

HY3403P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/140A RDS(ON)=2.2m (typ.)@VGS = 10V RDS(ON)=2.7m (typ.) @VGS =4.5V 100% avalanche tested S GD Excellent CdV/dt effect decline Lead- Free Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Infor

Otros transistores... SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , EMB07N03HR , EMF90P02A , FQP12N65C , FQPF12N65C , HY3408AP , EMB04N03H , HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN .

History: FDD6644

 

 

 


History: FDD6644

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA

 

 

 

Popular searches

bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m | 2sk1058

 

 

↑ Back to Top
.