2SK2796 Todos los transistores

 ..1. Size:76K  renesas
 2sk2796.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.1. Size:109K  renesas
 rej03g1034 2sk2796lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:266K  inchange semiconductor
 2sk2796l.pdf

isc N-Channel MOSFET Transistor 2SK2796L FEATURES Drain Current I = 16.9A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION DC/DC Converters DC/AC Inverters Motor Drives ABSOLUTE MA

 8.1. Size:311K  1
 2sk2799.pdf

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2799 Case FTO-220 (Unit mm) (F10F35VX2) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter

 8.2. Size:43K  sanyo
 2sk2791.pdf

Ordering number ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SK2791] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP 2092B [2SK2791] 6.5 2.3 5.0 0.5 4 0.5 0.85

 8.3. Size:141K  rohm
 2sk2793.pdf

Transistors Switching (500V, 5A) 2SK2793 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 16

 8.4. Size:137K  rohm
 2sk2793 1-5.pdf

 8.5. Size:136K  rohm
 2sk2792 1-5.pdf

 8.6. Size:140K  rohm
 2sk2792.pdf

Transistors Switching (600V, 4A) 2SK2792 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 15

 8.7. Size:21K  panasonic
 2sk2790.pdf

Power F-MOS FETs 2SK758 2SK2790(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Low ON-resistance RDS(on) 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching Motor drive 0.8 0.1 0.5max. 2.54 0.3 5.08 0.5 1 2 3 Absolute Maximum Ratings (Tc = 25 C) 1 Gate Parameter Sy

 8.8. Size:23K  panasonic
 2sk2797.pdf

Power F-MOS FETs 2SK2797 2SK2797(Tentative) Silicon N-Channel MOS Unit mm For high-speed switching 6.5 0.1 For high-frequency power amplification 5.3 0.1 4.35 0.1 3.0 0.1 Features Avalanche energy capability guaranteed EAS > 10mJ High-speed switching tf=15ns No secondary breakdown 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maxim

 8.9. Size:43K  hitachi
 2sk2795.pdf

2SK2795 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-466 A (Z) 2nd. Edition November. 1996 Features High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, D = 40 %min. (f = 836.5MHz) Compact package capable of surface mounting Outline UPAK 1 2 3 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge.

 8.10. Size:251K  inchange semiconductor
 2sk2799.pdf

isc N-Channel MOSFET Transistor 2SK2799 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS