FDP8441 Todos los transistores

 

FDP8441 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP8441
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FDP8441 Datasheet (PDF)

 ..1. Size:303K  fairchild semi
fdp8441 f085.pdf pdf_icon

FDP8441

September 2006tmFDP8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 ..2. Size:381K  fairchild semi
fdp8441.pdf pdf_icon

FDP8441

September 2006tmFDP8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 ..3. Size:284K  inchange semiconductor
fdp8441 .pdf pdf_icon

FDP8441

isc N-Channel MOSFET Transistor FDP8441FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 3.1m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 ..4. Size:283K  inchange semiconductor
fdp8441.pdf pdf_icon

FDP8441

isc N-Channel MOSFET Transistor FDP8441FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 2.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... STM121N , FDP65N06 , FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , 13N50 , FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 .

History: 2N6800SM | BLM05N03-D

 

 
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