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FDP8447L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP8447L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
   Paquete / Cubierta: TO220
 

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FDP8447L datasheet

 ..1. Size:188K  fairchild semi
fdp8447l.pdf pdf_icon

FDP8447L

May 2007 FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7m Features General Description Max rDS(on) = 8.7m at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver Max rDS(on) = 11.2m at VGS = 4.5V, ID = 11A low rDS(on) and optimized BVDSS capability to offer superior Fast Swi

 ..2. Size:300K  onsemi
fdp8447l.pdf pdf_icon

FDP8447L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:872K  cn vbsemi
fdp8447l.pdf pdf_icon

FDP8447L

FDP8447L www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUTE

 ..4. Size:283K  inchange semiconductor
fdp8447l.pdf pdf_icon

FDP8447L

isc N-Channel MOSFET Transistor FDP8447L FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 8.7m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 , IRF1407 , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 .

 

 

 


 
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