FDP8447L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP8447L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 50
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de FDP8447L MOSFET
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Selección ⓘ de transistores por parámetros
FDP8447L datasheet
..1. Size:188K fairchild semi
fdp8447l.pdf 
May 2007 FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7m Features General Description Max rDS(on) = 8.7m at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver Max rDS(on) = 11.2m at VGS = 4.5V, ID = 11A low rDS(on) and optimized BVDSS capability to offer superior Fast Swi
..2. Size:300K onsemi
fdp8447l.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:872K cn vbsemi
fdp8447l.pdf 
FDP8447L www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUTE
..4. Size:283K inchange semiconductor
fdp8447l.pdf 
isc N-Channel MOSFET Transistor FDP8447L FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 8.7m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25
8.1. Size:303K fairchild semi
fdp8441 f085.pdf 
September 2006 tm FDP8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta
8.2. Size:297K fairchild semi
fdp8443.pdf 
August 2007 FDP8443 tm N-Channel PowerTrench MOSFET 40V, 80A, 3.5m Applications Features Typ rDS(on) = 2.7m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A
8.3. Size:400K fairchild semi
fdp8442 f085.pdf 
May 2010 FDP8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.1m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet
8.4. Size:767K fairchild semi
fdp8440.pdf 
January 2009 FDP8440 tm N-Channel PowerTrench MOSFET 40V, 277A, 2.2m Features Application RDS(on) = 1.64m (Typ.)@ VGS = 10V, ID = 80A Automotive Engine Control Qg(tot) = 345nC (Typ.)@ VGS = 10V Powertrain Management Low Miller Charge Motors, Solenoids Low QRR Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse)
8.5. Size:291K fairchild semi
fdp8442.pdf 
June 2007 FDP8442 N-Channel PowerTrench MOSFET 40V, 80A, 3.1m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repetitiv
8.6. Size:449K fairchild semi
fdp8443 f085.pdf 
March 2009 FDP8443_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.5m Applications Features Typ rDS(on) = 2.7m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A
8.7. Size:381K fairchild semi
fdp8441.pdf 
September 2006 tm FDP8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta
8.8. Size:664K onsemi
fdp8440.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.9. Size:284K inchange semiconductor
fdp8441 .pdf 
isc N-Channel MOSFET Transistor FDP8441 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 3.1m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.10. Size:283K inchange semiconductor
fdp8443.pdf 
isc N-Channel MOSFET Transistor FDP8443 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 3.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.11. Size:283K inchange semiconductor
fdp8441.pdf 
isc N-Channel MOSFET Transistor FDP8441 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 2.7m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
Otros transistores... FDP75N08A
, FDP7N50
, FDP7N60NZ
, STM105N
, FDP80N06
, FDP8440
, FDP8441
, FDP8443F085
, IRF1407
, FDP8860
, STM102D
, FDP8870
, STM101N
, FDP8870F085
, STK900
, FDP8874
, STK801
.