FDP8447L Todos los transistores

 

FDP8447L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP8447L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
   Paquete / Cubierta: TO220
 

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FDP8447L Datasheet (PDF)

 ..1. Size:188K  fairchild semi
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FDP8447L

May 2007FDP8447LtmN-Channel PowerTrench MOSFET 40V, 50A, 8.7mFeatures General Description Max rDS(on) = 8.7m at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver Max rDS(on) = 11.2m at VGS = 4.5V, ID = 11Alow rDS(on) and optimized BVDSS capability to offer superior Fast Swi

 ..2. Size:300K  onsemi
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FDP8447L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:872K  cn vbsemi
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FDP8447L

FDP8447Lwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUTE

 ..4. Size:283K  inchange semiconductor
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FDP8447L

isc N-Channel MOSFET Transistor FDP8447LFEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 8.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 , P0903BDG , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 .

History: FCD850N80Z | IPF075N03L | FDS4935A

 

 
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