WMB014N06HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB014N06HG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 183.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 278 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 2253 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB014N06HG4 MOSFET
- Selecciónⓘ de transistores por parámetros
WMB014N06HG4 datasheet
wmb014n06hg4.pdf
WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB014N06HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb014n06lg4.pdf
WMB014N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB014N06LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb014n04lg4.pdf
WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB014N04LG4 uses Wayon's 4th generation power trench G MOSFET technology that has been especially tailored to minimize the ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb017n03lg2.pdf
WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5
Otros transistores... WM4C62160A , WM6C61042A , WMAA4N65D1B , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , IRFP260N , WMB014N06LG4 , WMB017N03LG2 , WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 .
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