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FDP8860 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP8860
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 254 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO220
 

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FDP8860 Datasheet (PDF)

 ..1. Size:323K  fairchild semi
fdp8860.pdf pdf_icon

FDP8860

September 2006FDP8860tmN-Channel PowerTrench MOSFET 30V, 80A, 2.5mFeatures General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80Asynchronous or conventional switching PWM controllers. It has Lo

 ..2. Size:284K  inchange semiconductor
fdp8860.pdf pdf_icon

FDP8860

isc N-Channel MOSFET Transistor FDP8860FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 2.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.1. Size:308K  fairchild semi
fdp8876.pdf pdf_icon

FDP8860

November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

 9.2. Size:469K  fairchild semi
fdp8874.pdf pdf_icon

FDP8860

NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized

Otros transistores... FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 , FDP8447L , 5N65 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 , FDP8876 .

History: IPW65R045C7 | STH60N10 | HFS2N60FS | CEF14P20 | TMPF15N50 | STH14N50 | NDF02N60Z

 

 
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