FDP8860 Todos los transistores

 ..1. Size:323K  fairchild semi
 fdp8860.pdf

September 2006 FDP8860 tm N-Channel PowerTrench MOSFET 30V, 80A, 2.5m Features General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80A synchronous or conventional switching PWM controllers. It has Lo

 ..2. Size:284K  inchange semiconductor
 fdp8860.pdf

isc N-Channel MOSFET Transistor FDP8860 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 2.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:308K  fairchild semi
 fdp8876.pdf

November 2005 FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

 9.2. Size:469K  fairchild semi
 fdp8874.pdf

N May 2008 tmM FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.6m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized

 9.3. Size:337K  fairchild semi
 fdp8870 f085.pdf

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo

 9.4. Size:696K  fairchild semi
 fdp8880 fdb8880.pdf

0 May 2008 tmM FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 11.6m , VGS = 10V, ID = 40A controllers. It has been op

 9.5. Size:463K  fairchild semi
 fdp8870.pdf

e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f

 9.6. Size:470K  fairchild semi
 fdp8896.pdf

N May 2008 tmM FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 7.0m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f

 9.7. Size:250K  fairchild semi
 fdp8878.pdf

November 2005 FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m General Descriptions Features rDS(ON) = 15m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 19m , VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con

 9.8. Size:519K  onsemi
 fdp8874.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:508K  onsemi
 fdp8880 fdb8880.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:513K  onsemi
 fdp8870.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:519K  onsemi
 fdp8896.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.12. Size:283K  inchange semiconductor
 fdp8874.pdf

isc N-Channel MOSFET Transistor FDP8874 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 53m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.13. Size:283K  inchange semiconductor
 fdp8880.pdf

isc N-Channel MOSFET Transistor FDP8880 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 116m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.14. Size:284K  inchange semiconductor
 fdp8870.pdf

isc N-Channel MOSFET Transistor FDP8870 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 41m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.15. Size:284K  inchange semiconductor
 fdp8896.pdf

isc N-Channel MOSFET Transistor FDP8896 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 59m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )