WMB03DN06T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMB03DN06T1
   Código: B03DN06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6.94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 5 nC
   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 24 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: PDFN5060-8L

Búsqueda de reemplazo de MOSFET WMB03DN06T1

WMB03DN06T1 Datasheet (PDF)

..1. Size:597K way-on
wmb03dn06t1.pdf

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD1D2D1D2D1 D2D1 D2WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1G1G2yet maintain superior switching performance. S2 S2G1G2S1Features PDFN5060-8L V = 60V, I = 6A DS DR

9.1. Size:637K way-on
wmb037n10hgs.pdf

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

9.2. Size:649K way-on
wmb034n06hg4.pdf

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

9.3. Size:988K way-on
wmb034n06lg4.pdf

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

9.4. Size:646K way-on
wmb032n04lg2.pdf

WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506

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