WMB042DN03LG2 Todos los transistores

 ..1. Size:1057K  way-on
 wmb042dn03lg2.pdf

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET Description WMB042DN03LG2 uses Wayon's2nd generation power trench G2 S2 S2 S2 S2 S2 MOSFET technology that has been especially tailored to S2 G2 minimize the on-state resistance and yet maintain superior G1 D1 switching performance. This device is well suited for high D1 D1 D1 D1 efficiency fast switching a

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB049N12HG2 uses Wayon's 2nd generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss on-state resistance and yet maintain superior switching performance. s ss G s This device is well suited for high efficiency fast switching applications. PDFN

 9.2. Size:445K  way-on
 wmb048nv6hg4.pdf

WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB048NV6HG4 uses Wayon's 4th generation power trench G s MOSFET technology that has been especially tailored to minimize ss ss s G the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8L switching applicatio

 9.3. Size:1106K  way-on
 wmb043n10lgs.pdf

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L

 9.4. Size:638K  way-on
 wmb040n03lg2.pdf

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

 9.5. Size:643K  way-on
 wmb048nv6lg4.pdf

WMB048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB048NV6LG4 uses Wayon's 4th generation power trench G s MOSFET technology that has been especially tailored to minimize ss ss s G the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8L switching applicatio

 9.6. Size:622K  way-on
 wmb040n08hgs.pdf

WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB040N08HGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L Fe

 9.7. Size:627K  way-on
 wmb043n10hgs.pdf

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB043N10HGS uses Wayon's advanced power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8