WMB048NV6LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMB048NV6LG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 96 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 735 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: PDFN5060-8L

Búsqueda de reemplazo de MOSFET WMB048NV6LG4

WMB048NV6LG4 Datasheet (PDF)

..1. Size:643K way-on
wmb048nv6lg4.pdf

WMB048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6LG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

5.1. Size:445K way-on
wmb048nv6hg4.pdf

WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6HG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

9.1. Size:976K way-on
wmb049n12hg2.pdf

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

9.2. Size:1057K way-on
wmb042dn03lg2.pdf

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

9.3. Size:1106K way-on
wmb043n10lgs.pdf

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L

9.4. Size:638K way-on
wmb040n03lg2.pdf

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

9.5. Size:622K way-on
wmb040n08hgs.pdf

WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N08HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LFe

9.6. Size:627K way-on
wmb043n10hgs.pdf

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10HGS uses Wayon's advanced power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCE60T2K2K

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