WMB060N08HG2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB060N08HG2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 428 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB060N08HG2 MOSFET
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WMB060N08HG2 datasheet
wmb060n08hg2.pdf
WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-
wmb060n08lg2.pdf
WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN506
wmb060n10lgs.pdf
WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB060N10LGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L
wmb060n10hgs.pdf
WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB060N10HGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L
Otros transistores... WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , SKD502T , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 .
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