WMB093N15HG4 Todos los transistores

 ..1. Size:619K  way-on
 wmb093n15hg4.pdf

WMB093N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB093N15HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060

 9.1. Size:546K  way-on
 wmb099n10hgs.pdf

WMB099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB099N10HGS uses Wayon's 2nd generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss on-state resistance and yet maintain superior switching performance. s ss G s This device is well suited for high efficiency fast switching applications. PDFN5060

 9.2. Size:645K  way-on
 wmb090nv6lg4.pdf

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:601K  way-on
 wmb099n10lgs.pdf

WMB099N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB099N10LGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L F

 9.4. Size:627K  way-on
 wmb098n03lg2.pdf

WMB098N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB098N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN506

 9.5. Size:476K  way-on
 wmb090n04lg2.pdf

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.6. Size:621K  way-on
 wmb090dn04lg2.pdf

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMB090DN04LG2 uses Wayon's 2nd generation power trench S1 MOSFET technology that has been especially tailored to minimize the G1 G2 S2 S2 G1 G2 on-state resistance and yet maintain superior switching performance. S1 This device is well suited for high efficiency fast swit

 9.7. Size:985K  way-on
 wmb090dnv6lg4.pdf

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB090DNV6LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchin

 9.8. Size:979K  way-on
 wmb099n10lg2.pdf

WMB099N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D WMB099N10LG2 uses Wayon's 2nd generation power trench MOSFET D D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This G s device is well suited for high efficiency fast switching applications PDFN5060