WMB115N15LG4 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMB115N15LG4 datasheet

..1. Size:975K way-on
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WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB115N15LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

5.1. Size:443K way-on
wmb115n15hg4.pdf pdf_icon

WMB115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB115N15HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

9.1. Size:640K way-on
wmb119n12lg4.pdf pdf_icon

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB119N12LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

9.2. Size:519K way-on
wmb119n10lg2.pdf pdf_icon

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN50