WMB129N10T2 Todos los transistores

 

WMB129N10T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB129N10T2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 127.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 129 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.8 nS
   Cossⓘ - Capacitancia de salida: 920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

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WMB129N10T2 Datasheet (PDF)

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WMB129N10T2

WMB129N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB129N10T2 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 129ASilicon Limited DS DR

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WMB129N10T2

WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB128N10T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 128A DS DR

 9.2. Size:620K  way-on
 wmb120p06ts.pdf pdf_icon

WMB129N10T2

WMB120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and GsssssGyet maintain superior switching performance. sFeatures PDFN5060-8L V = -60V, I = -120A DS DR

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