WMB129N10T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB129N10T2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 127.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 129 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.8 nS
Cossⓘ - Capacitancia de salida: 920 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: PDFN5060-8L
- Selección de transistores por parámetros
WMB129N10T2 Datasheet (PDF)
wmb129n10t2.pdf

WMB129N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB129N10T2 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 129ASilicon Limited DS DR
wmb128n10t2.pdf

WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB128N10T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 128A DS DR
wmb120p06ts.pdf

WMB120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and GsssssGyet maintain superior switching performance. sFeatures PDFN5060-8L V = -60V, I = -120A DS DR
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK2509 | GSM2341 | RRL025P03 | QH8MA3 | KF5N50IZ | BSS123A | IRF713
History: 2SK2509 | GSM2341 | RRL025P03 | QH8MA3 | KF5N50IZ | BSS123A | IRF713



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