WMK20N50D1 Todos los transistores

 

WMK20N50D1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK20N50D1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 285 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO220

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WMK20N50D1 datasheet

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 wmj20n50d1 wmk20n50d1 wml20n50d1.pdf pdf_icon

WMK20N50D1

WMJ20N50D1 WMK20N50D1 WML20N50D1 500V 20A 0.22 N-ch Power MOSFET Description TO-247 TO-220 TO-220F TAB WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G G D D D S S S Features V =550V@

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WMK20N50D1

WML20N70D1 WMK20N70D1 700V 20A 0.42 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications TAB requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.42 @V =10V

Otros transistores... WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , IRLZ44N , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 .

History: STD40NF10 | 2SK4080-ZK-E2-AY | VS3640DB | STF15N60M2-EP | SM4305PSKC | AO8803 | 2N90L-TA3-T

 

 

 

 

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