WMJ80N60C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMJ80N60C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 410 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Paquete / Cubierta: TO247
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WMJ80N60C4 Datasheet (PDF)
wmj80n60c4.pdf

WM C4 MJ80N60C 600V 0.033 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o
wmj80n60f2.pdf

WM F2 MJ80N60F 600V 0.037 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
wmj80n65f2.pdf

WM F2 MJ80N65F 650V 0.037 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
wmj80n65c4.pdf

WM C4 MJ80N65C 650V 0.033 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o
Otros transistores... WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , WMJ69N30DMH , STP75NF75 , WMJ80N60F2 , WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 .
History: FDMC89521L | MI4800 | FDBL0110N60 | NDT452AP-NL | IRL3715S | NTR1P02L | NTTFS3A08PZ
History: FDMC89521L | MI4800 | FDBL0110N60 | NDT452AP-NL | IRL3715S | NTR1P02L | NTTFS3A08PZ



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