WMK030N06LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK030N06LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 208.3 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 185 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 73.5 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 1260 pF
Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET WMK030N06LG4
WMK030N06LG4 Datasheet (PDF)
wmk030n06lg4.pdf
WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18
wmk030n06hg4.pdf
WMK030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18
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WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 170A
wmk036n12hgs.pdf
WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 120V, I = 188A
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
