WMK053NV8HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK053NV8HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 162 W
Voltaje máximo drenador - fuente |Vds|: 85 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 125 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 76.2 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 725 pF
Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
Paquete / Cubierta: TO220
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WMK053NV8HGS Datasheet (PDF)
wmk053nv8hgs.pdf
WMK053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDFeatures GTO-220 V = 85V, I = 125A DS
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