WMK053NV8HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK053NV8HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 162 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 125 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 725 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO220
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WMK053NV8HGS Datasheet (PDF)
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WMK053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMK053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDFeatures GTO-220 V = 85V, I = 125A DS
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Otros transistores... WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS , WMK043N10LGS , WMK048NV6HG4 , WMK048NV6LG4 , WMK053N10HGS , IRFP250 , WMK05N70MM , WMO05N70MM , WMN05N70MM , WMM05N70MM , WMP05N70MM , WMK060N08HG2 , WMK060N10LGS , WMK071N15HG2 .
History: WTC2305 | IRL3705ZSPBF | WST2026 | IRFH5302TRPBF | MTB20N06J3 | SJMN099R65SW | SSP80R380S2
History: WTC2305 | IRL3705ZSPBF | WST2026 | IRFH5302TRPBF | MTB20N06J3 | SJMN099R65SW | SSP80R380S2



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