WMK100N07TS Todos los transistores

 

WMK100N07TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK100N07TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 133 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 92 nC
   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 271 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm
   Paquete / Cubierta: TO220
 

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WMK100N07TS Datasheet (PDF)

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 wmk100n07ts.pdf pdf_icon

WMK100N07TS

WMK100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionWMK100N07TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 70V, I = 100A DS DR

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 wmk100n10ts.pdf pdf_icon

WMK100N07TS

WMK100N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK100N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features SDG V = 100V, I = 100A DS D TO-220R

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 wml10n65d1b wmk10n65d1b.pdf pdf_icon

WMK100N07TS

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

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 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMK100N07TS

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STF2459A | SIHP5N50D

 

 
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