FDPF10N50FT Todos los transistores

 

FDPF10N50FT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF10N50FT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

FDPF10N50FT Datasheet (PDF)

 ..1. Size:409K  fairchild semi
 fdp10n50f fdpf10n50ft.pdf pdf_icon

FDPF10N50FT

January 2009UniFETTMFDP10N50F / FDPF10N50FTN-Channel MOSFET 500V, 9A, 0.85Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 10pF)This advance technology has

 5.1. Size:483K  fairchild semi
 fdp10n50u fdpf10n50ut.pdf pdf_icon

FDPF10N50FT

November 2009UniFETTMFDP10N50U / FDPF10N50UTtmN-Channel MOSFET500V, 8A, 1.05Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis-tors are p roduced using Fa irchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 9pF)This advan ce technology

 7.1. Size:554K  fairchild semi
 fdp10n60zu fdpf10n60zut.pdf pdf_icon

FDPF10N50FT

April 2009TM UniFETFDP10N60ZU / FDPF10N60ZUTtmN-Channel MOSFET, FRFET 600V, 9A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 31nC)stripe, DMOS technology. Low Crss ( Typ. 15pF)This advance tech

 7.2. Size:659K  fairchild semi
 fdp10n60nz fdpf10n60nz.pdf pdf_icon

FDPF10N50FT

November 2013FDP10N60NZ / FDPF10N60NZN-Channel UniFETTM II MOSFET600 V, 10 A, 750 mFeatures Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ.

MOSTRAR MÁS

Otros transistores... STK801 , FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , SKD502T , FDPF10N50UT , FDPF10N60NZ , STM4472 , FDPF10N60ZUT , STG8209 , FDPF12N50FT , FDPF12N50NZ , FDPF12N50T .

History: IXTP50N28T | 3SK249

 

 
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