WMK115N15HG4 Todos los transistores

 

WMK115N15HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMK115N15HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 88 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 268 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: TO220
 

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WMK115N15HG4 Datasheet (PDF)

 ..1. Size:622K  way-on
 wmk115n15hg4.pdf pdf_icon

WMK115N15HG4

WMK115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 150V, I =

 9.1. Size:619K  way-on
 wmk110n20hg2.pdf pdf_icon

WMK115N15HG4

WMK110N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK110N20HG2 uses Wayon's 2nd generation powe trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 200V, I = 1

 9.2. Size:965K  way-on
 wmk119n12hg4.pdf pdf_icon

WMK115N15HG4

WMK119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK119N12HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 120V, I =

 9.3. Size:674K  way-on
 wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf pdf_icon

WMK115N15HG4

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

MOSTRAR MÁS

Otros transistores... WMK072N12HG2 , WMK072N12LG2 , WMK099N10HGS , WMK099N10LG2 , WMK099N10LGS , WMK100N07TS , WMK100N10TS , WMK110N20HG2 , CS150N03A8 , WMK119N12HG4 , WMK119N12LG4 , WMK120N04TS , WMK13N50D1B , WML13N50D1B , WMK15N50D1B , WML15N50D1B , WMK161N15T2 .

History: SIR850DP | AOD4156

 

 
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