WMK119N12LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMK119N12LG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET WMK119N12LG4

WMK119N12LG4 Datasheet (PDF)

..1. Size:970K way-on
wmk119n12lg4.pdf

WMK119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 120V, I =

5.1. Size:965K way-on
wmk119n12hg4.pdf

WMK119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK119N12HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 120V, I =

9.1. Size:619K way-on
wmk110n20hg2.pdf

WMK110N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK110N20HG2 uses Wayon's 2nd generation powe trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 200V, I = 1

9.2. Size:674K way-on
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

9.3. Size:664K way-on
wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf

WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S70SR, WM SR 700V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

9.4. Size:665K way-on
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf

WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S65SR, WM SR 650V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

9.5. Size:622K way-on
wmk115n15hg4.pdf

WMK115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 150V, I =

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: